Atomistic Study of lateral Charge Diffusion Degradation During Program/Er...
100 Gb/s Silicon Photonic WDM Transmitter with Misalignment-Tolerant Surf...
Nanofiber-Reinforced Silver Nanowires Network as a Robust, Ultrathin, and...
Deep Ultraviolet Light Source from Ultrathin GaN/AlN MQW Structures with ...
Epitaxy of III-Nitrides on -Ga2O3 and Its Vertical Structure LEDs
Impact of superlinear defect-related recombination on LED performance at ...
Selective generation and amplification of RKKY interactions by a p-n inte...
Design of an Electro-Absorption Modulator Based on Graphene-on-Silicon Sl...
Realization of p-GaN ohmic contact by using a strained p-AIInGaN interlay...
Versatile Crystal Structures and (Opto)electronic Applications of the 2D ...
官方微信
友情链接

Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor

2019-07-04

Authors: Dou, YM; Han, WH; Guo, YY; Zhao, XS; Zhang, XD; Wu, XY; Yang, FH
CHINESE PHYSICS B
Volume: 28 Issue: 6 Published: JUN 2019 Language: English Document type: Article
DOI: 10.1088/1674-1056/28/6/066804
Abstract:
We have investigated the temperature-dependent effective mobility characteristics in impurity band and conduction subbands of n-doped silicon junctionless nanowire transistors. It is found that the electron effective mobility of the first subband in 2-fold valleys is higher than that of the second subband in 4-fold valleys. There exists a maximum value for the effective subband mobilities at low temperatures, which is attributed to the increase of thermally activated electrons from the ionized donors in the impurity band. The experimental results indicate that the effective subband mobility is temperature-dependent on the electron interactions by thermal activation, impurity scattering, and intersubband scattering.
全文链接:http://cpb.iphy.ac.cn/EN/abstract/abstract74045.shtml



联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

[email protected]

交通地图
版权所有 ? 中国科学院半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 中国科学院半导体所声明

使命召唤ol传说级天命星标-c各参数及配件
北京急速赛车开奖官网 老时时360开奖数据 北京体彩网 新时时二星缩水软件 江苏e球彩助手 博彩刷反水日赚3000 重庆时时开奖号码预测 五分赛车猜前五 足球总进球数怎么算 nba记分牌说明